研究業績

2003 / 2004 / 2005 / 2006 / 2007 / 2008 / 2009 / 2010 / 2011 / 2012 / 2013 / 2014 / 2015 / 2016 / 2017 / 2018 / 2019 / 2020 / 2021 / 2022 / 2023

2015年

論文

  1. F. Zhang, H. Jan, K. Saito, T. Tanaka, M. Nishio, T. Nagaoka, M. Arita, and Q. Guo, "Toward the understanding of annealing effects on (GaIn)2O3 films", Thin Solid Films 578, 1-6 (2015).

  2. X. Wang, K. Saito, T. Tanaka, M. Nishio, and Q. Guo, "Lower temperature growth of single phase MgZnO films in all Mg content range", J Alloys Compd 627, 383-387 (2015).

  3. M. Nishio, K. Saito, K. Urata, Y. Okamoto, D. Tanaka, Y. Araki, M. Abiru, E. Mori, T. Tanaka, and Q. Guo, "Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE", J Cryst Growth 414, 114-118 (2015).

  4. S. Ohno, H. Tanaka, K. Tanaka, K. Takahashi, M. Tanaka, "Sexithiophene ultrathin films on passivated Si(001) surfaces: growth and electronic structure", Organic Electronics 25, 170-177 (2015).

  5. Y. Ishiwata, E. Takahashi, K. Akashi, M. Imamura, J. Azuma, K. Takahashi, M. Kamada, H. Ishii, Y.-F. Liao, Y. Tezuka, Y. Inagaki, T. Kawae, D. Nishio-Hamane, M. Nantoh, K. Ishibashi , T. Kida, "Impurity-Induced First-order Phase Transitions in Highly Crystalline V2O3 Nanocrystals", Advanced Materials Interfaces 2 (9), 1500132 (2015).

  6. S. Ohno, H. Tanaka, K. Takahashi, M. Kamada, M. Tanaka, "Adsorption and reaction of silver on an oxidized Si(001) surface", J. Electron Spectrosc. Relat. Phenom. 203, 35-39 (2015).

  7. Toru Tsujibayashi, Junpei Azuma, Isamu Yamamoto, Kazutoshi Takahashi, and Masao Kamada, "Photo-induced valence change of L-cysteine/Ag grown in saliva-emulated aqueous solution", Appl. Phys. Lett. 106, 173702 (2015).

  8. M. KAMADA, J. AZUMA, Y. UEDA, I. YAMAMOTO, M. IMAMURA, and K. TAKAHASHI, "Photoelectron Spectroscopic Study on Decay Processes of Core-Excited States of NaNO2", J. Phys. Soc. Jpn. 84, 054707 (2015).

  9. Yoshifumi Ikoma, Takamitsu Toyota, Yoshimasa Ejiri, Katsuhiko Saito, Qixin Guo, Zenji Horita, "Allotropic phase transformation and photoluminescence of germanium nanograins processed by high-pressure torsion", Journal of Materials Science 58, 138-143 (2015).

  10. Meng Dong-Dong, Zheng Xu-Guang, Liu Xiaodong, Xu Xingliang, Guo Qixin, "Deuterium ordering found in new ferroelectric compound Co2(OD)3Cl", Materials Research Express 2, 076101-1-7 (2015).

  11. Guoling Li, Fabi Zhang, Yi-Tao Cui, Hiroshi Oji, J.-Y. Son, Qixin Guo, "Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy", Applied Physics Letters 107, 022109-1-5 (2015).

  12. Xu Wang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Takashi Nagaoka, Makoto Arita, Qixin Guo, "Energy band bowing parameter in MgZnO alloys", Applied Physics Letters 107, 022111-1-5 (2015).

  13. Wenwen Zhao, Akinobu Tanaka, Kyoko Momosaki, Shinji Yamamoto, Fabi Zhang, Qixin Guo, Hideyuki Noguchi, "Enhanced electrochemical performance of Ti substituted P2-Na2/3Ni1/4Mn3/4O2 cathode material for sodium ion batteries", Electrochimica Acta 170, 171-181 (2015).

  14. X.H. Wang, L.Q. Huang, L.J. Niu, R.B. Li, D.H. Fan, F.B. Zhang, Z.W. Chen, X. Wang and Q.X. Guo, "The impacts of growth temperature on morphologies, compositions and optical properties of Mg-doped ZnO nanomaterials by chemical vapor deposition", Journal of Alloys and Compounds 622, 440-445 (2015).

  15. Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, "Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition", Journal of Materials Science: Materials in Electronics 26, 9624-9629 (2015).

  16. Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, "Low temperature growth of europium doped Ga2O3 luminescent films", Journal of Crystal Growth 430, 28-33 (2015).

  17. Haiyan Lv, Lei Zhang, Qi Mu, Ziwu Ji, Yuanjie Lv, Zhihong Feng, Xiangang Xu, Qixin Guo, "Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE", Chin. Phys. B 24, 124207-1-6 (2015).